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| BFS460L6 NPN Silicon RF TWIN Transistor * High fT of 22 GHz * For low voltage / low current applications * Ideal for VCO modules and low noise amplifiers * Low noise figure: 1.1 dB at 1.8 GHz * World's smallest SMD 6-pin leadless package * Excellent ESD performance * Built in 2 transistors (TR1, TR2: die as BFR460L3) * Short-term description 4 5 6 1 2 3 6 TR1 5 TR2 4 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS460L6 Maximum Ratings Parameter Marking Pin Configuration Package AB 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Symbol VCEO 4.5 4.2 VCES VCBO VEBO IC IB Ptot Tj TA T stg 15 15 1.5 50 5 200 150 -65 ... 150 -65 ... 150 mW C mA Value Unit V Collector-emitter voltage TA > 0 C TA 0 C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 104C Junction temperature Ambient temperature Storage temperature 1T is measured on the collector lead at the soldering point to the pcb S 1 Jun-15-2004 BFS460L6 Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value 230 Unit K/W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3 V, pulse measured 1For calculation of R thJA please refer to Application Note Thermal Resistance Unit max. 10 100 1 160 V A nA A - typ. 5.8 120 V(BR)CEO ICES ICBO IEBO hFE 4.5 90 2 Jun-15-2004 BFS460L6 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz Power gain, maximum stable1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 3 GHz Transducer gain IC = 20 mA, VCE = 3 V, ZS = ZL = 50, f = 1.8 GHz IC = 20 mA, VCE = 3 V, ZS = ZL = 50, f = 3 GHz Third order intercept point at output2) VCE = 3 V, I C = 20 mA, ZS = ZL = 50, f = 1,8 GHz 1dB Compression point at output IC = 20 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 16 - 22 0.33 0.17 0.57 0.5 - GHz pF Ccb Cce Ceb F dB 1.1 1.4 dB 14.5 10 - G ms |S21e|2 IP 3 12.5 9 28 dBm P-1dB - 12 - 3 Jun-15-2004 |
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